Deep Level Transient Spectroscopy Reveals Influence of Defects on 2D Semiconductor Devices
A recent study used deep level transient spectroscopy to investigate the electrical response of defect filling and emission in monolayer metal-organic chemical vapor deposition (MOCVD)-grown materials deposited on complementary metal-oxide-semiconductor (CMOS)-compatible substrates.
Researchers Develop Adaptive Gap-Tunable SERS Device
In a new study, researchers from Ulsan National Institute of Science and Technology and Pohang University of Science and Technology presented a new surface-enhanced Raman spectroscopy (SERS) device, improving gap plasmon resonance.